Samsung has dismissed rumours alleging defects in its 3-nanometer (3nm) foundry process as "baseless." Reports suggested production challenges that could necessitate reliance on the Snapdragon 8 Gen 4 for the Galaxy S25 series, as noted by analyst Ming-Chi Kuo. However, Samsung has strongly rebutted these claims.
Defect in Samsung Foundry’s 3nm Process Node -
Regarding the defect in Samsung Foundry’s 3nm process node, as reported by THE CHOSUN Daily, it affected 2,500 lots (equivalent to 65,000 monthly 12-inch wafers), resulting in estimated losses of approximately KRW 1 trillion ($720 million). Reports conflict on whether all wafers were discarded due to defects, and the situation is still under assessment.
Samsung's production capacity for the second-generation 3nm chip process is currently set at 60,000 sheets per month. The company has implemented multiple inspection procedures to prevent large-scale defects.
Potential Use of Exynos 2500 in Galaxy S25 -
The Financial News indicated that Samsung Electronics might introduce its Exynos 2500 mobile application processor (AP) in the Galaxy S25, which contrasts with earlier reports suggesting a sole reliance on Snapdragon processors.
Initial reports suggested a yield of around 20% for the Exynos 2500, but new information from tipster Panda Flash suggests a potential yield of over 40%, with mass production generally requiring at least a 60% yield.
MediaTek’s Dimensity Chip Consideration -
Additionally, there are considerations that Samsung is evaluating MediaTek's Dimensity chip for the Galaxy S25 series to enhance its bargaining position with Qualcomm, amid plans by Qualcomm to increase Snapdragon 8 Gen 4 prices by 25-30% and to address the challenges with the Exynos 2500's yield.
Samsung has not previously utilized a three-SoC mix in its flagship phones nor equipped its premium phones with a MediaTek chip. Given the absence of additional leaks, caution is advised in interpreting this report.
The Galaxy S25 launch is scheduled more than six months away, allowing sufficient time for potential adjustments.
